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KELR-TE10
KJT
KJT-KELR-TE series laser displacement sensors adopt the triangulation measurement principle and use linear array CMOS devices as optical receiving devices. They have the characteristics of high measurement accuracy and short measurement time. The product optical path has been uniquely designed and the imaging quality is stable. ;With unique fill light technology.
Product Paramenters | |||||
Product No | KELR-TE03 | KELR-TE05 | KELR-TE10 | KELR-TE20 | KELR-TE40 |
Measuring distance | 30mm | 50mm | 100mm | 200mm | 400mm |
Measuring range | ±5mm | ±15mm | ±35mm | ±80mm | ±200mm |
Beam Diameter | 约φ50μm | 约φ70μm | 约φ120μm | 约φ300μm | 约φ500μm |
Repeatability | 10μm | 30μm | 70μm | 200μm | 300μm/800μm |
Supply Voltage | Uv12V DC~24V DC±10% | ||||
Residual Ripple | Pulsation P-P10% | ||||
Current Consumption | At 12V DC voltage/below 60MA/ ±0.1%F.S/ Cast aluminum alloy (AL)/ 4 Digital Tube At 24V DC voltage/below ≤ 40MA / ±0.2%F.S/ Plexiglass (PMMA) / 2*LED | ||||
Enclosure rating | IP67 | ||||
Degree Of Protection | III | ||||
Light Receiving Element | CMOS Image Sensor | ||||
Light Source | Red semiconductor laser class 2 (JIS/IEC/GB), class Ⅱ (FDA) | ||||
Analog Output | Load impedance: 300Ω maximum; ON when light incident ON when no light incident is switchable | ||||
Short Circuit Protection | Automatic Reset | ||||
Control Output | NPN open collector transistor / Maximum sink current: 50mA / Applied voltage: 30VDC or less (between control output and 0V) / Residual voltage: 1.5V or less (at sink current 50mA) / Leakage current: 0.1mA or less | ||||
PNP open collector transistor / Maximum source current: 50mA / Applied voltage: 30V DC or less (between control output and +V) / Residual voltage: 1.5V or less (at sink current 50mA) / Leakage current: 0.1mA or less |
KJT-KELR-TE series laser displacement sensors adopt the triangulation measurement principle and use linear array CMOS devices as optical receiving devices. They have the characteristics of high measurement accuracy and short measurement time. The product optical path has been uniquely designed and the imaging quality is stable. ;With unique fill light technology.
Product Paramenters | |||||
Product No | KELR-TE03 | KELR-TE05 | KELR-TE10 | KELR-TE20 | KELR-TE40 |
Measuring distance | 30mm | 50mm | 100mm | 200mm | 400mm |
Measuring range | ±5mm | ±15mm | ±35mm | ±80mm | ±200mm |
Beam Diameter | 约φ50μm | 约φ70μm | 约φ120μm | 约φ300μm | 约φ500μm |
Repeatability | 10μm | 30μm | 70μm | 200μm | 300μm/800μm |
Supply Voltage | Uv12V DC~24V DC±10% | ||||
Residual Ripple | Pulsation P-P10% | ||||
Current Consumption | At 12V DC voltage/below 60MA/ ±0.1%F.S/ Cast aluminum alloy (AL)/ 4 Digital Tube At 24V DC voltage/below ≤ 40MA / ±0.2%F.S/ Plexiglass (PMMA) / 2*LED | ||||
Enclosure rating | IP67 | ||||
Degree Of Protection | III | ||||
Light Receiving Element | CMOS Image Sensor | ||||
Light Source | Red semiconductor laser class 2 (JIS/IEC/GB), class Ⅱ (FDA) | ||||
Analog Output | Load impedance: 300Ω maximum; ON when light incident ON when no light incident is switchable | ||||
Short Circuit Protection | Automatic Reset | ||||
Control Output | NPN open collector transistor / Maximum sink current: 50mA / Applied voltage: 30VDC or less (between control output and 0V) / Residual voltage: 1.5V or less (at sink current 50mA) / Leakage current: 0.1mA or less | ||||
PNP open collector transistor / Maximum source current: 50mA / Applied voltage: 30V DC or less (between control output and +V) / Residual voltage: 1.5V or less (at sink current 50mA) / Leakage current: 0.1mA or less |